Applications today need the right storage to process large amounts of data efficiently. Meet the 24/7 demands of datacentre and enterprise storage with Samsung SSD. Samsung's comprehensive SSD portfolio helps you meet critical speed requirements with confidence, eradicating performance and efficiency bottlenecks.
PM863a offers double the capacity of the competition while handling heavy mixed workloads with reduced latency. PM863a halves TCO compared with conventional HDDs, thanks to its low power consumption. This is suitable for various servers, including web, streaming, application and cache servers.
The SM863 is designed with Samsung V-NAND technology to provide all the essentials for datacentre environments - more capacity, speed, endurance and power efficiency. As a result, the SM863a is optimal for 24/7 datacentre operations under heavy workloads.
PM963 offers tremendous performance for read-intensive datacentres by applying PCIe Gen 3, achieving 430K IOPs in random read and 4.3x faster speeds than SATA. Using impressively low power in small form factors (2.5”, M.2), PM963 delivers an efficient SSD solution for mixed data workloads.
With speedy response times, SM963 is the perfect enterprise SSD for write-intensive datacentres. MLC NAND technology enhances reliability at 3.6 DWPD. Our offerings of the compact M.2 form factor or the 2.5” form factor allow for significantly space-efficient server designs.
Embedded with advanced flash memory, PM1725a is the optimal SSD for essential workloads, capable of huge data throughput. Its ultra-low latency and PCIe Gen3 (dual port 2x2, single port x8) achieve superb performance without bottlenecks. Maximum 5 DWPD top expectations for reliability and endurance.
PM1633a delivers high-value faster read speeds while improving TCO, with an industry-first capacity of 15.36TB. With outstanding reliability, security and endurance, PM1633a provides a powerful solution for mission-critical enterprise applications.
Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity. This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.